TFLN Intensity Modulator (No Light Source)

The thin-film lithium niobate (TFLN) intensity modulator is an exceptional opto-electric converter device, which was developed in-house and showcased unparalleled  performance. This device features thermal-optic bias control interface and is manufactured using advanced coupling and micro-electronic processes, and realizes high opto-electric conversion efficiency on TFLN. Compared to other commercial bulk lithium niobate-based modulators, our products provide superior characteristics on half-wave voltage, stability, and device size, significantly enhancing critical performance in digital optical communications and telecommunication networks.

Absolute Maximum Ratings

Working over maximum ratings could significantly reduce device reliability and cause irreversible damage.

Parameters	Symbol	Min.	Max.	Unit
RF Input Power	Sin	–	23	dBm
RF Swing Voltage	Vpp	-4.465	+4.465	V
RF RMS Voltage	Vrms	–	3.16	V
Optical Input Power	Pin. max	–	20	dBm
Heater Bias Voltage	Vh	0	5	V
Storage Temperature	Ts	-40	85	℃
Relative Humidity(no condensation)	RH	5	90	%

Specifications

Category	Parameters	Symbol	Unit	Performance
Optical  Features	Operating Wavelength	λ	nm	X2: C
				~ 1550
	Optical Extinction Ratio(@ DC)	ER	dB	≥20
	Optical Return Loss	ORL	dB	≤-27
	Optical Insertion Loss	IL	dB	Max: 5.5Typ: 4.5
Electrical Features	3dB Bandwidth （from 2 GHz）	S21	GHz	X1 : 2	X1 : 4
				Min: 18Typ: 20	Min: 36Typ: 40
	RF Load	Rm	Ohm	50±10
	RF Vπ（@ 50 KHz）	Vπ	V	X3: 5	X3: 6
				Max: 3.0Typ: 2.5	Max: 3.5Typ: 3.0
	Heater Resistance	Rh	Ohm	220±10
	Heater Pπ (@ DC)	Pπ	mw	≤50
	RF Return Loss ( 10 MHz to 40 GHz)	S11	dB	≤-10
WorkCondition	Operating Temperature*	TO	℃	-20~70

*Customization is available.

Category	Parameters	Symbol	Unit	Performance
Optical  Features	Operating Wavelength	λ	nm	X2 : O
				~1310
	Optical Extinction Ratio(@ DC)	ER	dB	≥20
	Optical Return Loss	ORL	dB	≤-27
	Optical Insertion Loss	IL	dB	Max: 5.5Typ: 4.5
Electrical Features	3 dB Bandwidth （from 2 GHz）	S21	GHz	X1 : 2	X1 : 4
				Min: 18Typ: 20	Min: 36Typ: 40
	RF Load	Rm	Ohm	50±10
	RF Vπ（@ 50 KHz）	Vπ	V	X3 : 4
				Max: 2.5Typ: 2.0
	Heater Resistance	Rh	Ohm	220±10
	Heater Pπ(@ DC)	Pπ	mw	≤50
	RF Return Loss    (10 MHz to 40 GHz)	S11	dB	≤-10
WorkCondition	Operating Temperature*	TO	°C	-20~70

*Customization is available.

Package and Pins (Unit: mm)

Working over maximum ratings could significantly reduce Die reliability and cause irreversible damage.

PIN	Symbol	Description
1	MPD0+	MPD0 anode (GND)
2	MPD0-	MZ modulator input optical power monitor MPD0 cathode
3	Heater+	Heater bias positive electrode
4	Heater-	Heater bias negative electrode
5	MPD1 +	MPD1 anode (GND)
6	MPD1-	MZ modulator output optical power monitor MPD1 cathode
7	–	N/A
RF	RF connector*	2.92mm connector
In	Input fiber	FC/APC, PMF
Out	Output fiber	FC/APC, PMF

* Customizable 1.85mm connector.

S21 & S11 Measurement (Typical)

Figure 1: S21

Figure 2: S11

Ordering Information

P/N: NY – X₁X₂ 6PPBM X₃ 1

Optional Model	Description	Optional Code
X1	RF 3dB Bandwidth	2 or 4
X2	Working Wavelength	O or C
X3	RF Vπ	5 or 6 for C-band	4 for O-band

Product Description: LiNbO3 TFLN intensity modulator device, polarization maintaining fiber as optical input and output.

Contact Information

Email:sales@neoncq.com 

Address:16/F, Building L, Gaoke Headquarters Square, NO.64 Huangshan Avenue, Yubei, 401123, Chongqing,China

Statement

NEON reserves the right to make changes without further notice to any products or data herein to improve reliability, function, or design. Information furnished byNEON is believed to be accurate and reliable. However, NEON does not assume any liability arising out of the application or use of this information, nor the application or use of any product or circuit described herein, neither does it convey any license under its patent rights nor the rights of others.