1211476025998573569 2
1211480148835827713
1218086712861970434
1218088013222039554 1
1218087719687868417 1
1554088052771
1554088052593
  • 1211476025998573569 2
  • 1211480148835827713
  • 1218086712861970434
  • 1218088013222039554 1
  • 1218087719687868417 1
  • 1554088052771
  • 1554088052593

    • AMPD-D High Speed Amplified Microwave InGaAs Photodetector

    The AMPD-D can provide a bandwidth of 12GHz and 20GHz. High Gain 30dB, Wavelength 1000 to 1650nm,+9V supply voltages, standard single-mode 9/125μm fiber, SMA compatible connector, ROHS 2.0 certified.

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    Introduction of AMPD-D High Speed Amplified Microwave InGaAs Photodetector

    • The AMPD-D is an optoelectronic hybrid integrated by broadband InGaAs photodiode and low noise amplifier. The response wavelength of the InGaAs PIN photodiode is 1000 to 1650nm. The RF gain of low noise amplifier is 30dB.
    •  AMPD-D can provide a bandwidth of 12GHz and 20GHz. The module operates on +9V supply voltages. It complies with a standard single-mode 9/125μm fiber input. The RF output port is an SMA compatible connector matched by 50 ohm impedance.
    •  AMPD-D is hermetically sealed and weighs less than 23 grams.
    • ROHS 2.0 certificated.

    Features of AMPD-D High Speed Amplified Microwave InGaAs Photodetector

    • Wide Bandwidth
    • Incorporated Bias-T
    • O/E Hybrid Integrated
    • High Gain, Low Noise, Broadband
    • Hermetically Sealed, SMA Connector

    Applications of AMPD-D High Speed Amplified Microwave InGaAs Photodetector

    • Radar Information Processing
    • Electronic Warfare
    • Antenna Measurement

    AMPD-D High Speed Amplified Microwave InGaAs Photodetector Selection

    Typical & Absolute Maximum Rating
    Parameter Sym. Typ Rating Unit
    Storage temperature range TSTG -45 ～ +85 -55 ～ +100 ℃
    Operating case temperature range TC 25 -40 ～ +85 ℃
    Bias Voltage VR 9 +9 ～ +12 V
    Optical Input Power Pin 0 10 dBm
    Burn-out Optical Power PB – 13 dBm
    Lead soldering temperature Tp 280（10s） 330（10s） ℃

    Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ )
    Parameter Sym Test Condition Parameter Values Unit
    Wavelength Range λ － 1000 ～ 1650 nm
    Frequency Range － － X – Band Ku – Band －
    Small Signal Bandwidth f-3dB TC = 22 ± 3℃ 0. 3 ～ 12 2 ～ 20 GHz
    Responsivity Re VR =+9V,  Pin =10mW λ = 1310 nm ≥ 0.8 ≥ 0.85 A/W
          λ = 1550 nm ≥ 0.85 ≥ 0.8  
    Amplitude Flatness A TC =-45～+85 ℃ ≤ ± 2 dB
    Saturation Optical Power Ps VR = +9 V, λ = 1550 nm 10 dBm
    AC Modulated
    RF Signal Gain G － 30 ± 1 dB
    Saturation RF Output Power Pout － 10 dBm
    Output VSWR VSWR － ≤ 2 －
    Output Impedance RL － 50 Ω

    Typical Response Curves

    1199532095073804289
    Fig . 1 X- Band Photodetector Frequency Response
    1199531718718906370 1
    Fig . 2 Ku- Band Photodetector Frequency Response

    Dimension and Pins ( Unit: mm[inch] )

    AMPD-D High Speed Amplified Microwave InGaAs Photodetector

    RF Connector： SMA

    Ordering Information

    Ordering Information

    Precautions

    1. The fiber bending radius is no less than 20 mm to avoid fiber damage.
    2. Be sure the fiber coupling facet is clean before connecting it to the opto-circuit.
    3. The suitable ESD protection is required in storage, transportation, and use.

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    Warmly welcome to contact us to know more about high-speed photodetector and visit our factory anytime. Please let us know if there are any questions in Business.