AMPD-D High Speed Amplified Microwave InGaAs Photodetector

The AMPD-D can provide a bandwidth of 12GHz and 20GHz. High Gain 30dB, Wavelength 1000 to 1650nm,+9V supply voltages, standard single-mode 9/125μm fiber, SMA compatible connector, ROHS 2.0 certified.


Introduction of AMPD-D High Speed Amplified Microwave InGaAs Photodetector

  • The AMPD-D is an optoelectronic hybrid integrated by broadband InGaAs photodiode and low noise amplifier. The response wavelength of the InGaAs PIN photodiode is 1000 to 1650nm. The RF gain of low noise amplifier is 30dB.
  •  AMPD-D can provide a bandwidth of 12GHz and 20GHz. The module operates on +9V supply voltages. It complies with a standard single-mode 9/125μm fiber input. The RF output port is an SMA compatible connector matched by 50 ohm impedance.
  •  AMPD-D is hermetically sealed and weighs less than 23 grams.
  • ROHS 2.0 certificated.

Features of AMPD-D High Speed Amplified Microwave InGaAs Photodetector

  • Wide Bandwidth
  • Incorporated Bias-T
  • O/E Hybrid Integrated
  • High Gain, Low Noise, Broadband
  • Hermetically Sealed, SMA Connector

Applications of AMPD-D High Speed Amplified Microwave InGaAs Photodetector

  • Radar Information Processing
  • Electronic Warfare
  • Antenna Measurement

AMPD-D High Speed Amplified Microwave InGaAs Photodetector Selection

Typical & Absolute Maximum Rating
Parameter Sym. Typ Rating Unit
Storage temperature range TSTG -45 ~ +85 -55 ~ +100
Operating case temperature range TC 25 -40 ~ +85
Bias Voltage VR 9 +9 ~ +12 V
Optical Input Power Pin 0 10 dBm
Burn-out Optical Power PB 13 dBm
Lead soldering temperature Tp 280(10s) 330(10s)

Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ )
Parameter Sym Test Condition Parameter Values Unit
Wavelength Range λ 1000 ~ 1650 nm
Frequency Range X – Band Ku – Band
Small Signal Bandwidth f-3dB TC = 22 ± 3℃ 0. 3 ~ 12 2 ~ 20 GHz
Responsivity Re VR =+9V,  Pin =10mW λ = 1310 nm ≥ 0.8 ≥ 0.85 A/W
      λ = 1550 nm ≥ 0.85 ≥ 0.8  
Amplitude Flatness A TC =-45~+85 ℃ ≤ ± 2 dB
Saturation Optical Power Ps VR = +9 V, λ = 1550 nm 10 dBm
AC Modulated
RF Signal Gain G 30 ± 1 dB
Saturation RF Output Power Pout 10 dBm
Output VSWR VSWR ≤ 2
Output Impedance RL 50 Ω

Typical Response Curves

Fig . 1 X- Band Photodetector Frequency Response
1199531718718906370 1
Fig . 2 Ku- Band Photodetector Frequency Response

Dimension and Pins ( Unit: mm[inch] )

AMPD-D High Speed Amplified Microwave InGaAs Photodetector

RF Connector: SMA

Ordering Information

Ordering Information


  1. The fiber bending radius is no less than 20 mm to avoid fiber damage.
  2. Be sure the fiber coupling facet is clean before connecting it to the opto-circuit.
  3. The suitable ESD protection is required in storage, transportation, and use.

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