NY55D Series High Power DWDM DFB Laser

NY55D series laser component is characterized for use as a wavelength selected, high-power optical source in combination with an external modulator in CATV and DWDM networks, especially for super trunking and distribution. Selected wavelengths comply with ITU Grid recommendations, both in range and in channel definition.

NY55D series is equipped with polarization maintaining (PM) fiber and DC-coupled with a built-in TEC, thermistor, and monitor photodiode. The device is mounted in a 14-pin, OC-48 pin-out compatible butterfly package with the optical isolator inside the package.

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Description

Features of NY55D Series High Power DWDM DFB Laser

High-Dynamic-Range
Low Threshold Current
High Output Power
14pin Butterfly Package
Operating Case Temperature: -20 to 70℃
High Reliability
Up to 100mw high power output
Polarization Maintaining (PM) fiber

Applications of NY55D Series High Power DWDM DFB Laser

DWDM
CATV
Free Space Optics

NY55D Series High Power DWDM DFB Laser Selection

Electrical / Optical Characteristics (Tc = 25 ± 3 ℃)
Parameter	Sym.	Condition	Min	Typ	Max	Units
Frequency	f	–	0.01	–	1	Ghz
Bandwidth (-3dB,I=200mA)	S21	–	1			Ghz
Optical output power		40 mW version, T = Tset, I_F = I_OP	40	–	–	mW
		50 mW version, T = Tset, I_F = I_OP	50
		63 mW version, T = Tset, I_F = I_OP	63
		80 mW version, T = Tset, I_F = I_OP	80
		100 mW version, T = Tset, I_F = I_OP	100
Thershold current	Ith	BOL	–	–	40	mA
Operation current	Iop	40 mW version, BOL	–	–	280	mA
		50 mW version, BOL	–	–	350
		63 mW version, BOL	–	–	450
		80 mW version, BOL			580
		100 mW version, BOL			650
Operation voltage	Vop	BOL, I_F = I_OP	–	–	2.5	V
Peak wavelength	λ	T = Tset, I_F = I_OP	–	1550	–	nm
Rative intensity noise	RIN	–	–	–	-160	dB/Hz
Side-mode suppression ratio	SMSR		30	–	–	dB
Polarization extinctionratio	PER	I_F = I_OP	17	–	–	dB
Wavelength drift over T_C Range	∆λ_TOP	T = T_OP	–	–	40	pm
Thermistor resistance	Rth	T_OP=25℃	9.5	10	10.5	KΩ
Thermistor Temp. Coefficients	T_CTH	T_OP=25℃	–	-4.4	–	%/°C
TEC current	Itec	-20℃<TC<70℃	-1	–	1.5	A
TEC voltage	Vtec	-20℃<TC<70℃	-2	–	3	V
RF impedance	Zin	40 MHz – 1002 MHz	1	–	6	Ω
Monitor PD current	Im	IF = I_OP , VMPD = -5 V	0.1	–	2.5	mA
Monitor PD Dark current (PD)	Id	I_OP = 0 mA , VMPD = -5 V	–	–	0.2	uA

Typical & Absolute Maximum Rating
Parameter	Sym.	Condition	Min.	Max.	Unit
Laser forward DC current	If	–	–	750	mA
Laser reverse voltage	V	–	–	2	V
Photodiode Reverse Voltage	VR	–	–	10	V
Operation temperature	To	–	-20	70	°C
Storage temperature	Ts	–	-40	85	°C
ESD	–	HBM: R = 1500 Ω, C = 100 pF	-500	500	V

Notes: All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.

Typical Data

Electrical Schematic

Lead#	Function	Lead#	Function
1	Thermistor	8	GND
2	Thermistor	9	GND
3	LD-(Bias)	10	NC
4	PD anode	11	GND(LD+)
5	PD cathode	12	RF IN
6	Cooler+	13	GND(LD+)
7	Cooler-	14	NC

Dimension and Pins ( Unit: mm[inch] )

Ordering Information

Precautions

The fiber bending radius is no less than 20 mm to avoid fiber damage.
Be sure the fiber coupling facet is clean before connecting it to the Opto-circuit.
Suitable ESD protection is required in storage, transportation, and use.

We are happy to provide you with commercial services. If you have any questions or needs about our laser diode module, please feel free to contact us.