1218088903853133825 1
1218089355131486209
1218089406322966530
1218089433883136001
1218090276984979457
  • 1218088903853133825 1
  • 1218089355131486209
  • 1218089406322966530
  • 1218089433883136001
  • 1218090276984979457

    • AMPD-S High Speed Amplified Microwave InGaAs Photodetector

    The AMPD-S is an optoelectronic hybrid integrated by broadband InGaAs photodiode and low noise amplifier. Wavelength:1000 to 1650nm, Gain:15 dB, Bandwidth/Frequency:12GHz and 18GHz, Optical input: Standard single-mode 9/125μm fiber, RF output: SMA compatible connector, hermetically sealed, Weighs less than 23 grams, ROHS 2.0 certificated.

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    Introduce of AMPD-S High Speed Amplified Microwave InGaAs Photodetector

    1. The AMPD-S is an optoelectronic hybrid integrated by broadband InGaAs photodiode and low noise amplifier. The response wavelength of the InGaAs PIN photodiode is 1000 to 1650nm. The RF gain of a low noise amplifier is 15 dB.
    2.  AMPD-S can provide a bandwidth of 12GHz and 18GHz. The module operates on +5V supply voltages. It complies with a standard single-mode 9/125μm fiber input. The RF output port is an SMA compatible connector matched by 50 ohm impedance.
    3.  APMD-S is hermetically sealed and weighs less than 23 grams.
    4. ROHS 2.0 certificated.

    Features of AMPD-S High Speed Amplified Microwave InGaAs Photodetector

    • Wide Bandwidth
    • Incorporated Bias-T
    • O/E Hybrid Integrated
    • High Gain, Low Noise, Broadband
    • Hermetically Sealed, SMA connector

    Applications of AMPD-S High Speed Amplified Microwave InGaAs Photodetector

    • Radar Information Processing
    • Electronic Warfare
    • Antenna Measurement

    AMPD-S High Speed Amplified Microwave InGaAs Photodetector Selection

    Typical & Absolute Maximum Rating
    Parameter Sym. Typ Rating Unit
    Storage temperature range TSTG -45 ～ +85 -55 ～ +100 ℃
    Operating case temperature range TC 25 -40 ～ +85 ℃
    Bias Voltage VR 5 +5 ～ +9 V
    Optical Input Power Pin 0 10 dBm
    Burn-out Optical Power PB – 13 dBm
    Lead soldering temperature Tp 280（10s） 330（10s） ℃
    Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ )
    Parameter Sym Test Condition Parameter Values Unit
    Wavelength Range λ － 1000 ～ 1650 nm
    Frequency Range － － X – Band Ku – Band －
    Small Signal Bandwidth f-3dB TC = 22 ± 3℃ 0. 3 ～ 12 0. 8 ～ 19.5 GHz
    Responsivity Re VR =+5V,  Pin =10mW λ = 1310 nm ≥ 0.8 ≥ 0.85 A/W
    λ = 1550 nm ≥ 0.85 ≥ 0.8
    Amplitude Flatness A TC =-45～+85 ℃ ≤ ± 2 dB
    Saturation Optical Power Ps VR =+ 5 V, λ = 1550 nm 10 dBm
    AC Modulated
    RF Signal Gain（Typical） G － 15 ± 1 dB
    Saturation RF Output Power Pout － +3 dBm
    Output VSWR VSWR － ≤ 2 －
    Output Impedance RL － 50 Ω


    Typical Response Curves

    1202416246374391810
    Fig . 1 X- Band Photodetector Frequency Response
    1202416311235108865
    Fig . 2 Ku- Band Photodetector Frequency Response

    Dimension and Pins ( Unit: mm[inch] ) 

    AMPD-S High Speed Amplified Microwave InGaAs Photodetector

    RF Connector： SMA

    Model Information

    Model Information

    Precautions

    1. The fiber bending radius is no less than 20 mm to avoid fiber damage.
    2. Be sure the fiber coupling facet is clean before connecting it to the Opto-circuit.
    3. Suitable ESD protection is required in storage, transportation, and use.

    We are happy to provide you with commercial services. If you have any questions or needs about NEON’s high-speed photodetectors, please feel free to contact us.