AMPD-S High-Speed Amplified Microwave InGaAs Laser Photodetector
The AMPD-S is an optoelectronic hybrid integrated by broadband InGaAs photodiode and low noise amplifier. Wavelength:1000 to 1650nm, Gain:15 dB, Bandwidth/Frequency:12GHz and 18GHz, Optical input: Standard single-mode 9/125μm fiber, RF output: SMA compatible connector, hermetically sealed, Weighs less than 23 grams, ROHS 2.0 certificated.
Introduce of AMPD-S Laser Photodetector
The AMPD-S is a laser photodetector integrated by a broadband InGaAs photodiode and low noise amplifier. The response wavelength of the InGaAs PIN photodiode is 1000 to 1650nm. The RF gain of a low-noise amplifier is 15 dB.
AMPD-S photodiode laser detector can provide the bandwidth of 12GHz and 18GHz. The module operates on +5V supply voltages. It complies with a standard single-mode 9/125μm fiber input. The RF output port is an SMA-compatible connector matched by 50-ohm impedance.
APMD-S is hermetically sealed and weighs less than 23 grams.
ROHS 2.0 certificated.
Features of AMPD-S InGaAs Laser Photodetector
Wide Bandwidth
Incorporated Bias-T
O/E Hybrid Integrated
High Gain, Low Noise, Broadband
Hermetically Sealed, SMA connector
Applications of AMPD-S InGaAs Laser Photodetector
Radar Information Processing
Electronic Warfare
Antenna Measurement
Product Selection
Typical & Absolute Maximum Rating | ||||
Parameter | Sym. | Typ | Rating | Unit |
Storage temperature range | TSTG | -45 ~ +85 | -55 ~ +100 | ℃ |
Operating case temperature range | TC | 25 | -40 ~ +85 | ℃ |
Bias Voltage | VR | 5 | +5 ~ +9 | V |
Optical Input Power | Pin | 0 | 10 | dBm |
Burn-out Optical Power | PB | – | 13 | dBm |
Lead soldering temperature | Tp | 280(10s) | 330(10s) | ℃ |
Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ ) | ||||||
Parameter | Sym | Test Condition | Parameter Values | Unit | ||
Wavelength Range | λ | - | 1000 ~ 1650 | nm | ||
Frequency Range | - | - | X – Band | Ku – Band | - | |
Small Signal Bandwidth | f-3dB | TC = 22 ± 3℃ | 0. 3 ~ 12 | 0. 8 ~ 19.5 | GHz | |
Responsivity | Re | VR =+5V, Pin =10mW | λ = 1310 nm | ≥ 0.8 | ≥ 0.85 | A/W |
λ = 1550 nm | ≥ 0.85 | ≥ 0.8 | ||||
Amplitude Flatness | A | TC =-45~+85 ℃ | ≤ ± 2 | dB | ||
Saturation Optical Power | Ps | VR =+ 5 V, λ = 1550 nm | 10 | dBm | ||
AC Modulated | ||||||
RF Signal Gain(Typical) | G | - | 15 ± 1 | dB | ||
Saturation RF Output Power | Pout | - | 3 | dBm | ||
Output VSWR | VSWR | - | ≤ 2 | - | ||
Output Impedance | RL | - | 50 | Ω |
Typical Response Curves
Dimension and Pins ( Unit: mm[inch] )
RF Connector: SMA
Model Information
Precautions
- The fiber bending radius is no less than 20 mm to avoid fiber damage.
- Be sure the fiber coupling facet is clean before connecting it to Opto-circuit.
- Suitable ESD protection is required in storage, transportation, and use.
We are happy to provide you with commercial services. If you have any questions or needs about NEON’s high-speed photodetectors, please feel free to contact us.