AMPD-S High-Speed Amplified Microwave InGaAs Laser Photodetector
The AMPD-S is an optoelectronic hybrid integrated by broadband InGaAs photodiode and low noise amplifier. Wavelength:1000 to 1650nm, Gain:15 dB, Bandwidth/Frequency:12GHz and 18GHz, Optical input: Standard single-mode 9/125μm fiber, RF output: SMA compatible connector, hermetically sealed, Weighs less than 23 grams, ROHS 2.0 certificated.
Introduce of AMPD-S Laser Photodetector
The AMPD-S is a laser photodetector integrated by a broadband InGaAs photodiode and low noise amplifier. The response wavelength of the InGaAs PIN photodiode is 1000 to 1650nm. The RF gain of a low-noise amplifier is 15 dB.
AMPD-S photodiode laser detector can provide the bandwidth of 12GHz and 18GHz. The module operates on +5V supply voltages. It complies with a standard single-mode 9/125μm fiber input. The RF output port is an SMA-compatible connector matched by 50-ohm impedance.
APMD-S is hermetically sealed and weighs less than 23 grams.
ROHS 2.0 certificated.
Features of AMPD-S InGaAs Laser Photodetector
Wide Bandwidth
Incorporated Bias-T
O/E Hybrid Integrated
High Gain, Low Noise, Broadband
Hermetically Sealed, SMA connector
Applications of AMPD-S InGaAs Laser Photodetector
Radar Information Processing
Electronic Warfare
Antenna Measurement
Product Selection
| Typical & Absolute Maximum Rating | ||||
| Parameter | Sym. | Typ | Rating | Unit |
| Storage temperature range | TSTG | -45 ～ +85 | -55 ～ +100 | ℃ |
| Operating case temperature range | TC | 25 | -40 ～ +85 | ℃ |
| Bias Voltage | VR | 5 | +5 ～ +9 | V |
| Optical Input Power | Pin | 0 | 10 | dBm |
| Burn-out Optical Power | PB | – | 13 | dBm |
| Lead soldering temperature | Tp | 280（10s） | 330（10s） | ℃ |
| Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ ) | ||||||
| Parameter | Sym | Test Condition | Parameter Values | Unit | ||
| Wavelength Range | λ | － | 1000 ～ 1650 | nm | ||
| Frequency Range | － | － | X – Band | Ku – Band | － | |
| Small Signal Bandwidth | f-3dB | TC = 22 ± 3℃ | 0. 3 ～ 12 | 0. 8 ～ 19.5 | GHz | |
| Responsivity | Re | VR =+5V, Pin =10mW | λ = 1310 nm | ≥ 0.8 | ≥ 0.85 | A/W |
| λ = 1550 nm | ≥ 0.85 | ≥ 0.8 | ||||
| Amplitude Flatness | A | TC =-45～+85 ℃ | ≤ ± 2 | dB | ||
| Saturation Optical Power | Ps | VR =+ 5 V, λ = 1550 nm | 10 | dBm | ||
| AC Modulated | ||||||
| RF Signal Gain（Typical） | G | － | 15 ± 1 | dB | ||
| Saturation RF Output Power | Pout | － | 3 | dBm | ||
| Output VSWR | VSWR | － | ≤ 2 | － | ||
| Output Impedance | RL | － | 50 | Ω | ||
Typical Response Curves
Dimension and Pins ( Unit: mm[inch] )
RF Connector： SMA
Model Information
Precautions
- The fiber bending radius is no less than 20 mm to avoid fiber damage.
- Be sure the fiber coupling facet is clean before connecting it to Opto-circuit.
- Suitable ESD protection is required in storage, transportation, and use.
We are happy to provide you with commercial services. If you have any questions or needs about NEON’s high-speed photodetectors, please feel free to contact us.
