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  • 1290182253918035969
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  • 1290182419962142721
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    • NY13D Series – Microwave DFB 1310nm Fiber Laser Diode

    • NY13D series DFB laser diode is a directly modulated DFB laser that provides exceptional performance for linear fiber optics communications in very wide bandwidth applications. NY13D’s linear fiber optic lasers are an excellent alternative to using coaxial cable systems to transmit 12 GHz or 18 GHz signals. They offer significant improvements in the reliability of microwave communications networks by transmitting the RF signal in its original format. As a result of these properties, laser products provide significant improvements in signal quality for a wide variety of applications including antenna remoting, telemetry, timing, reference signal distribution, measurement, and delay lines.
    • The 1310nm laser diode built-in optical isolator, TEC, thermistor, laser diode chip, and monitor photodiode are hermetically sealed in a 7PIN butterfly package.

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    Fiber Laser Diode Features

    • HighHigh-Dynamic-Range
    • 18 GHz Bandwidth
    • Low threshold current
    • High output power
    • 7pin butterfly package with SMA connector
    • Operating case temperature:  -40 to 70℃
    • High reliability

    Applications of Fiber Laser Diode

    • Antenna Remoting
    • Cellular and PCS Networks
    • Analog RF links transmission
    • Military Communications
    • Tracking, Telemetry, and Control

    Performance Specifications of Fiber Laser Diode

    Absolute Maximum Ratings

    Parameter

    Symbol

    Min.

    Max.

    Unit

    Laser diode forward current

    If

    –

    120

    mA

    Laser diode reverse voltage

    V

    –

    1

    V

    Front power

    Pf

    –

    20

    dBm

    PD reverse voltage

    V

    –

    15

    V

    Forward current (PD)

    Im

    –

    2

    mA

    Operation temperature

    To

    -40

    +70

    °C

    Storage temperature

    Ts

    -55

    +85

    °C

    Storage relative humdity

    Sr

    –

    85

    %

    Optical and Electrical Specification (Tc=25°C)

    Parameter

    Symbol

    Test Condition

    Min

    Typ

    Max

    Units

    Note

    Wavelength

    λ

    IF = IOP, T = TOP

    –

    1310

    –

    nm

     

    Frequency

    –

    X Option

    0.1

    –

    12

    GHz

    –

    Ku option

    1

    –

    18

    Optical Output Power

    P

    IF=Iop

    –

    10

    –

    mW

    1

    Thershold current

    Ith

    λ=1310nm

    –

    –

    10

    mA

    –

    Operation current

    Iop

    λ=1310nm

    –

    55

    100

    mA

    –

    Operation voltage

    Vop

    λ=1310nm

    –

    1.5

    2.5

    V

    –

    Slope efficiency

    SE

    –

    0.2

    –

    –

    W/A

    –

    Side-mode suppression ratio

    SMSR

    λ=1310nm ,IF=Iop

    30

    –

    –

    dB

    –

    Rative Intensity Noise

    RIN

    –

    –

    –

    -130

    dB/Hz

    –

    Bandwidth (-3dB,I=60mA)

    S21

    X Option

    –

    12

    –

    GHz

    –

    Ku option

    –

    18

    –

    Return loss（VSWR）

    VSWR

    X Option

    –

    –

    2

    dB

    –

    Ku option

    –

    –

    2.2

    Input 1 dB Compression

    –

    –

    15

    –

    –

    dBm

    –

    Thermistor Resistance

    Rth

    @25℃

    –

    10

    –

    Kohm

    –

    TEC current

    It

    –

    –

    –

    1.2

    A

    2

    TEC voltage

    Vt

     

    –

    –

    2.5

    V

    2

    Capacitance (PD)

    Ct

     

    –

    –

    20

    pF

    –

    Monitoring current

    Im

    –

    0.10

    –

    2.0

    mA

    –

    Dark current (PD)

    Id

     

    –

    –

    50

    nA

    –

    Notes: All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.

    Laser temperature set 25℃, bias current at 55mA
    Operation case temperature -40~70℃

    Typical Data

    （λ= 1310nm，TC = 25℃）

    1234361843331227649 1
    （ Fig . 1  X- Band S11 and S22 data ）
    2
    （ Fig . 2  Ku- Band S11 and S22 data ）

    Electrical Schematic

    微信截图 20220301133715

    Outline Drawings(Unit: mm[inch])

    1234363017903464450 1

    Ordering Information

    1328536068501118978

    Precautions

    • The fiber bending radius no less than 20 mm for avoiding fiber damage.
    • Be sure the fiber coupling facet is clean before connecting it to Opto-circuit.
    • Suitable ESD protection is required in storage, transportation, and use.

    NEON is a laser diode manufacturer of highly engineered commercial and industrial off-the-shelf or customized modules designed for today’s high-speed optical communication network infrastructures and leading-edge defense systems. NEON pioneered RF photonics, microwave photonics, and optical delay line technology to effectively realize the feature of ultra-wideband, high dynamic range, integration of RF system, etc.

    We are happy to provide you with commercial services. If you have any questions or needs about our Laser Diode Module, please feel free to contact us.