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TFLN DIE AND MODULATOR

Introduction of TFLN Die & Modulator

Thin Film Lithium Niobate (TFLN) photonics technology with its advanced high-frequency signal processing features, is expected to play a crucial role in next-generation wireless communications and radar systems. The realization of highly integrated, high-performance will pave the way for its widespread deployment in practical applications.

Through special processes, the bottleneck of traditional lithium niobate process has been overcome, the low loss Lithium Niobate submicron waveguides was achieved. Compared to traditional Si modulators and InP modulators, At the same half-wave voltage, the length of TFLN modulators are significantly reduced. By optimizing the parameters of the traveling wave electrode, the modulator will achieve ultra-high modulation bandwidth greater than 100GHz.

tfln introduction

Thin Film Lithium Niobate chips and modulators have the characteristics of highly integrated, large electro-optic modulation bandwidth, high electro-optic effect linearity, high stability, high phase consistency, high reliability, low loss, low power consumption, low drive, small size, compatibility with CMOS technology ans so on.

Thin Film Lithium Niobate (TFLN) supplies are widely used in optical communication, optical sensing, optical computing, and optical measurement an so on.