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  • 1270546374274682882
  • 1270546405794877442
  • 1270546423067021314
  • 1270546448253816834

    • MAMPD-4 Multichannel High-Speed Amplified Microwave Photodetector

    MAMPD-4 is an optoelectronic hybrid integrated by broadband InGaAs photodiode and low noise amplifier. Wavelength:1000 to 1650nm, Gain:15 dB, Bandwidth/Frequency: 12GHz and 18GHz, Optical input: Standard single-mode 9/125μm fiber, RF output: SMP compatible connector, hermetically sealed, Weighs less than 62 grams, ROHS 2.0 certificated.

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    Introduction of MAMPD-4 Multichannel High-Speed Amplified Microwave Photodetector

    The MAMPD-4 is an optoelectronic hybrid integrated by broadband InGaAs photodiode and low noise amplifier. The response wavelength of the InGaAs PIN photodiode is 1000 to 1650nm. The RF gain of a low-noise amplifier is 15 dB.

    MAMPD-4 can provide a bandwidth of 12GHz and 18GHz. The module operates on +5V supply voltages. It complies with a standard single-mode 9/125μm fiber input. The RF output port is an SMP-compatible connector matched by 50 ohm impedance.

    MAMPD-4 is hermetically sealed and weighs less than 62 grams.

    ROHS 2.0 certificated.

    Features of MAMPD-4 Multichannel High-Speed Amplified Microwave Photodetector

    • Wide Bandwidth
    • Incorporated Bias-T
    • O/E Hybrid Integrated
    • High Gain, Low Noise, Broadband
    • Hermetically Sealed, SMP connector

    Applications of MAMPD-4 Multichannel High-Speed Amplified Microwave Photodetector

    • Radar Information Processing
    • Electronic Warfare
    • Antenna Measurement

    MAMPD-4 Multichannel High-Speed Amplified Microwave Photodetector Selection

    Typical & Absolute Maximum Rating
    Parameter Sym. Typ Rating Unit
    Storage temperature range TSTG -45 ～ +85 -55 ～ +100 ℃
    Operating case temperature range TC 25 -40 ～ +85 ℃
    Bias Voltage VR 5 +5 ～ +9 V
    Optical Input Power Pin 0 10 dBm
    Burn-out Optical Power PB – 13 dBm
    Lead soldering temperature Tp 280（10s） 330（10s） ℃

    Electrical / Optical Characteristics (TC = 22 ± 3 ℃ )
    Parameter Sym Test Condition Parameter Values Unit
    Wavelength Range λ － 1000 ～ 1650 nm
    Frequency Range － － X – Band Ku – Band －
    Small Signal Bandwidth f-3dB TC = 22 ± 3℃ 0. 3 ～ 12 2 ～ 18 GHz
    Responsivity Re VR =+5V,  Pin =10mW λ = 1310 nm ≥ 0.8 ≥ 0.85 A/W
    λ = 1550 nm ≥ 0.85 ≥ 0.8
    Amplitude Flatness A TC =-45～+85 ℃ ≤ ± 2 dB
    Saturation Optical Power Ps VR =+ 5 V, λ = 1550 nm 10 dBm
    AC Modulated
    RF Signal Gain（Typical） G － 15 ± 1 dB
    Saturation RF Output Power Pout － 3 dBm
    Output VSWR VSWR － ≤ 2 －
    Output Impedance RL － 50 Ω

    Typical Response Curves

    1270547917824692225
    Fig . 1 X- Band Photodetector Frequency Response
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    Fig . 2 Ku- Band Photodetector Frequency Response

    Dimension and Pins ( Unit: mm[inch] ) 

    1270548510257549313

    Model Information

    1270548164340715522

    Precautions

    • The fiber bending radius is no less than 20 mm to avoid fiber damage.
    • Be sure the fiber coupling facet is clean before connecting it to the Opto-circuit.
    • Suitable ESD protection is required in storage, transportation, and use.

    NEON‘s main technology design for:

    • Simulate high-speed photoelectric detection
    • Digital photoelectric modulation
    • High-speed photoelectric transceiver components
    • The various fiber-optic transmission facility

    We are happy to provide you with commercial services. If you have any questions or needs about our high-speed photodetectors, please feel free to contact us.