NY13D Series – Microwave DFB 1310nm Fiber Laser Diode

  • NY55D series fiber-coupled laser diode is characterized for use as a wavelength selected source(CW optical source) in combination with the external modulators in CATV and DWDM networks, especially for super trunking and distribution. Selected wavelengths comply with ITU Grid recommendations, both in range and in channel definition.
  • NY55D series fiber-coupled laser is equipped with polarization maintaining (PM) fiber and dc-coupled with a built-in TEC, thermistor, and monitor photodiode. The device is mounted in a 14-pin, OC-48 pinout compatible butterfly package with the optical isolator inside the package.

Attachment


Fiber Laser Diode Features

  • HighHigh-Dynamic-Range
  • 18 GHz Bandwidth
  • Low threshold current
  • High output power
  • 7pin butterfly package with SMA connector
  • Operating case temperature:  -40 to 70℃
  • High reliability

Applications of Fiber Laser Diode

  • Antenna Remoting
  • Cellular and PCS Networks
  • Analog RF links transmission
  • Military Communications
  • Tracking, Telemetry, and Control

Performance Specifications of Fiber Laser Diode

Absolute Maximum Ratings

Parameter

Symbol

Min.

Max.

Unit

Laser diode forward current

If

120

mA

Laser diode reverse voltage

V

1

V

Front power

Pf

20

dBm

PD reverse voltage

V

15

V

Forward current (PD)

Im

2

mA

Operation temperature

To

-40

+70

°C

Storage temperature

Ts

-55

+85

°C

Storage relative humdity

Sr

85

%

Optical and Electrical Specification (Tc=25°C)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Note

Wavelength

λ

IF = IOP, T = TOP

1310

nm

 

Frequency

X Option

0.1

12

GHz

Ku option

1

18

Optical Output Power

P

IF=Iop

10

mW

1

Thershold current

Ith

λ=1310nm

10

mA

Operation current

Iop

λ=1310nm

55

100

mA

Operation voltage

Vop

λ=1310nm

1.5

2.5

V

Slope efficiency

SE

0.2

W/A

Side-mode suppression ratio

SMSR

λ=1310nm ,IF=Iop

30

dB

Rative Intensity Noise

RIN

-130

dB/Hz

Bandwidth (-3dB,I=60mA)

S21

X Option

12

GHz

Ku option

18

Return loss(VSWR)

VSWR

X Option

2

dB

Ku option

2.2

Input 1 dB Compression

15

dBm

Thermistor Resistance

Rth

@25℃

10

Kohm

TEC current

It

1.2

A

2

TEC voltage

Vt

 

2.5

V

2

Capacitance (PD)

Ct

 

20

pF

Monitoring current

Im

0.10

2.0

mA

Dark current (PD)

Id

 

50

nA

Notes: All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.

Laser temperature set 25℃, bias current at 55mA
Operation case temperature -40~70℃

Typical Data

(λ= 1310nm,TC = 25℃)

1234361843331227649 1
( Fig . 1  X- Band S11 and S22 data )
2
( Fig . 2  Ku- Band S11 and S22 data )

Electrical Schematic

微信截图 20220301133715

Outline Drawings(Unit: mm[inch])

1234363017903464450 1

Ordering Information

1328536068501118978

Precautions

  • The fiber bending radius no less than 20 mm for avoiding fiber damaged.
  • Be sure the fiber coupling facet is clean before connecting it to Opto-circuit.
  • Suitable ESD protection is required in storage, transportation and use.

NEON is a laser diode manufacturer of highly engineered commercial and industrial off-the-shelf or customized modules designed for today’s high-speed optical communication network infrastructures and leading-edge defense systems. NEON pioneered RF photonics, microwave photonics, and optical delay line technology to effectively realize the feature of ultra-wideband, high dynamic range, integration of RF system, etc.

We are happy to provide you with commercial services. If you have any questions or needs about our Laser Diode Module, please feel free to contact us.