NY13D Series – 1310nm Microwave DFB Laser Module

NY13D series laser module is a directly modulated DFB laser that provides exceptional performance for linear fiber optics communications in very wide bandwidth applications.
NY13D’s linear fiber optic lasers are an excellent alternative to using coaxial cable systems to transmit 12 GHz or 18 GHz signals. They offer significant improvements in the reliability of microwave communications networks by transmitting the RF signal in its original format.
As a result of these properties, laser products provide significant improvements in signal quality for a wide variety of applications including antenna remoting, telemetry, timing and reference signal distribution, measurement, and delay lines.
The NY13D series laser built-in optical isolator, TEC, thermistor, laser diode chip, and monitor photodiode are hermetically sealed in a 7PIN butterfly package.

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Description

1310nm Microwave DFB Laser Module Features

HighHigh-Dynamic-Range
18 GHz Bandwidth
Low threshold current
High output power
7pin butterfly package with SMA connector
Operating case temperature: -40 to 70℃
High reliability

Applications of 1310nm Microwave DFB Laser Module

Antenna Remoting
Cellular and PCS Networks
Analog RF links transmission
Military Communications
Tracking, Telemetry, and Control

Performance Specifications of Fiber Laser Diode

Absolute Maximum Ratings
Parameter	Symbol	Min.	Max.	Unit
Laser diode forward current	I_f	–	120	mA
Laser diode reverse voltage	V	–	1	V
Front power	P_f	–	20	dBm
PD reverse voltage	V	–	15	V
Forward current (PD)	I_m	–	2	mA
Operation temperature	T_o	-40	70	°C
Storage temperature	T_s	-55	85	°C
Storage relative humdity	S_r	–	85	%

Optical and Electrical Specification (Tc=25°C)
Parameter	Symbol	Test Condition	Min	Typ	Max	Units	Note
Wavelength	λ	I_F = I_OP, T = T_OP	–	1310	–	nm
Frequency	–	X Option	0.1	–	12	GHz	–
Frequency	–	Ku option	1	–	18	GHz	–
Optical Output Power	P	I_F=I_op	–	10	–	mW	1
Thershold current	I_th	λ=1310nm	–	–	10	mA	–
Operation current	I_op	λ=1310nm	–	55	100	mA	–
Operation voltage	V_op	λ=1310nm	–	1.5	2.5	V	–
Slope efficiency	SE	–	0.2	–	–	W/A	–
Side-mode suppression ratio	SMSR	λ=1310nm ,IF=I_op	30	–	–	dB	–
Relative Intensity Noise	RIN	–	–	–	-130	dB/Hz	–
Bandwidth (-3dB,I=60mA)	S₂₁	X Option	–	12	–	GHz	–
Bandwidth (-3dB,I=60mA)	S₂₁	Ku option	–	18	–	GHz	–
VSWR	VSWR	X Option	–	–	2	–	–
VSWR	VSWR	Ku option	–	–	2.2	–	–
Input 1 dB Compression	–	–	15	–	–	dBm	–
Thermistor Resistance	R_th	@25℃	–	10	–	Kohm	–
TEC current	I_t	–	–	–	1.2	A	2
TEC voltage	V_t		–	–	2.5	V	2
Capacitance (PD)	C_t		–	–	20	pF	–
Monitoring current	I_m	–	0.1	–	2	mA	–
Dark current (PD)	I_d		–	–	50	nA	–
Output Impedance	R_L	–	–	50	–	Ω	–

Notes: All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.

Laser temperature set 25℃, bias current at 55mA
Operation case temperature -40~70℃

Typical Data

（λ= 1310nm，TC = 25℃）

1234361843331227649 1 — **（ Fig . 1 X- Band S11 and S22 data ）**

**（ Fig . 2 Ku- Band S11 and S22 data ）**

Electrical Schematic

Outline Drawings(Unit: mm[inch])

Ordering Information

Precautions

The fiber bending radius no less than 20 mm for avoiding fiber damage.
Be sure the fiber coupling facet is clean before connecting it to Opto-circuit.
Suitable ESD protection is required in storage, transportation, and use.

NEON is a laser diode manufacturer of highly engineered commercial and industrial off-the-shelf or customized modules designed for today’s high-speed optical communication network infrastructures and leading-edge defense systems. NEON pioneered RF photonics, microwave photonics, and optical delay line technology to effectively realize the feature of ultra-wideband, high dynamic range, integration of RF system, etc.

We are happy to provide you with commercial services. If you have any questions or needs about our Laser Diode Module, please feel free to contact us.