AMPD-S High-Speed Amplified Microwave InGaAs Laser Photodetector

The AMPD-S is an optoelectronic hybrid integrated by broadband InGaAs photodiode and low noise amplifier. Wavelength:1000 to 1650nm, Gain:15 dB, Bandwidth/Frequency:12GHz and 18GHz, Optical input:Standard single-mode 9/125μm fiber,RF output :SMA compatible connector, hermetically sealed, Weighs:less than 23 grams,ROHS 2.0 certificated.

Attachment


Introduce of AMPD-S Laser Photodetector

The AMPD-S is a laser photodetector integrated by broadband InGaAs photodiode and low noise amplifier. The response wavelength of InGaAs PIN photodiode is 1000 to 1650nm. The RF gain of a low noise amplifier is 15 dB. 

AMPD-S photodiode laser detector can provide the bandwidth of 12GHz and 18GHz. The module operates on +5V supply voltages. It complies with a standard single-mode 9/125μm fiber input. The RF output port is an SMA-compatible connector matched by 50-ohm impedance.

APMD-S is hermetically sealed and weighs less than 23 grams. 

ROHS 2.0 certificated.

Features of AMPD-S InGaAs Laser Photodetector

Wide Bandwidth

Incorporated Bias-T

O/E Hybrid Integrated

High Gain, Low Noise, Broadband

Hermetically Sealed, SMA connector

Applications of AMPD-S InGaAs Laser Photodetector

Radar Information Processing

Electronic Warfare

Antenna Measurement

Product Selection

Typical & Absolute Maximum Rating
Parameter Sym. Typ Rating Unit
Storage temperature range TSTG -45 ~ +85 -55 ~ +100
Operating case temperature range TC 25 -40 ~ +85
Bias Voltage VR 5 +5 ~ +9 V
Optical Input Power Pin 0 10 dBm
Burn-out Optical Power PB 13 dBm
Lead soldering temperature Tp 280(10s) 330(10s)
Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ )
Parameter Sym Test Condition Parameter Values Unit
Wavelength Range λ 1000 ~ 1650 nm
Frequency Range X – Band Ku – Band
Small Signal Bandwidth f-3dB TC = 22 ± 3℃ 0. 3 ~ 12 0. 8 ~ 19.5 GHz
Responsivity Re VR =+5V,  Pin =10mW λ = 1310 nm ≥ 0.8 ≥ 0.85 A/W
λ = 1550 nm ≥ 0.85 ≥ 0.8
Amplitude Flatness A TC =-45~+85 ℃ ≤ ± 2 dB
Saturation Optical Power Ps VR =+ 5 V, λ = 1550 nm 10 dBm
AC Modulated
RF Signal Gain(Typical) G 15 ± 1 dB
Saturation RF Output Power Pout 3 dBm
Output VSWR VSWR ≤ 2
Output Impedance RL 50 Ω


Typical Response Curves

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Fig . 1 X- Band Photodetector Frequency Response
1202416311235108865
Fig . 2 Ku- Band Photodetector Frequency Response

Dimension and Pins ( Unit: mm[inch] ) 

1202416397037293570
AMPD-S High-Speed Amplified Microwave InGaAs Laser Photodetector 15

RF Connector: SMA

Model Information

1328231376197144578
AMPD-S High-Speed Amplified Microwave InGaAs Laser Photodetector 16

Precautions

  1. The fiber bending radius is no less than 20 mm for avoiding fiber damage.
  2. Be sure the fiber coupling facet is clean before connecting it to Opto-circuit.
  3. Suitable ESD protection is required in storage, transportation, and use.

We are happy to provide you with commercial services. If you have any questions or needs about NEON’s high-speed photodetectors, please feel free to contact us.