1218075824650715137 1
1218076225584234497
1218076477346729986
1218078421453373442
1218078485491404801
1554090046796 1
1554090046637
1554090046611
  • 1218075824650715137 1
  • 1218076225584234497
  • 1218076477346729986
  • 1218078421453373442
  • 1218078485491404801
  • 1554090046796 1
  • 1554090046637
  • 1554090046611

    • HSPD High-Speed InGaAs Photodetector

    The HSPD High-Speed ​​Detector Module is designed for digital and analog applications with a 50-ohm impedance-matched RF connection. The module contains an InGaAs PIN photodiode and the necessary matching electronics.

    Attachment

    Download

    Introduction of HSPD InGaAs Photodetector

    The HSPD high-speed detector module is designed for both digital and analog applications. The module contains an InGaAs PIN photodiode whose response wavelength covers 1250 to 1650 nm and necessary matching electronics.

    HSPD can provide the bandwidth of 8 GHz, 12 GHz, 18 GHz, 22 GHz, and 30 GHz. The module operates on +3.3 or +5V (depending on the model of HSPD). It complies with a standard single-mode 9/125μm fiber input. The RF output port is an SMA-compatible connector or 2.92 mm connector matched by 50 ohm impedance.

    HSPD is hermetically sealed and weighs less than 15 grams.

    ROHS 2.0 certificated.

    Features of HSPD InGaAs Photodetector

    • Wide Bandwidth
    • Incorporated Bias-T
    • DC Coupled
    • Hermetically Sealed, SMA Connector

    Applications of HSPD InGaAs Photodetector

    • High-speed Optical-fiber Communication
    • Radar Information Processing
    • Electronic Warfare
    • High-speed Signal Test and Measurement

    HSPD InGaAs Photodetector Selection

    Typical & Absolute Maximum Rating
    Parameter Sym. Typ Rating Unit
    Storage temperature range TSTG -45 ～ +85 -55 ～ +100 ℃
    Operating case temperature range TC 25 -40 ～ +85 ℃
    Bias Voltage VR 3.3 or 5 2.8 ～ 5.25 V
    Optical Input Power Pin 3 10 dBm
    Burn-out Optical Power PB – 13 dBm
    Lead soldering temperature Tp 280（10s） 330（10s） ℃

    Electrical / Optical Characteristics (TC = 22 ± 3 ℃ )
    Parameter Sym Test Condition Parameter Values Unit
    Wavelength Range λ － 1000～1650 nm
    Frequency Range － － C-Band X-Band Ku-Band Ku+-Band K+-Band PLUS －
    Small Signal Bandwidth f-3dB TC = 22 ± 3℃ 0.1～8 0.3～12 0.8～18 2～22 2～30 0.3～18 GHz
    Responsivity Re VR , Pin=1mW λ = 1310nm ≥ 0.85 ≥ 0.85 ≥ 0.8 ≥ 0.75 ≥ 0.75 ≥ 0.75 A/W
    λ = 1550nm ≥ 0.95 ≥ 0.95 ≥ 0.75 ≥ 0.70 ≥ 0.65 ≥ 0.70
    Amplitude Flatness A TC =-40～+85 ℃ ≤±1.5 ≤±1.5 ≤ ±1.5 ≤±2 ≤±2 ≤±1.5 dB
    Output VSWR VSWR － ≤ 2 ≤ 2 ≤ 2.5 ≤ 2.5 ≤ 2.5 ≤ 2.5 －
    Bias Voltage VR － 3.3 3.3 3.3 3.3 5 5 V
    RF Connector － － SMA SMA SMA 2.92mm 2.92mm SMA －
    Saturation Optical Power Ps VR , λ = 1550nm 7 7 7 7 7 10 dBm
    AC Modulated
    Dark Current Id VR ≤ 10 ≤ 10 ≤ 10 ≤ 10 ≤ 10 ≤ 10 nA
    Saturation RF Output Power Pout － -10 dBm
    Output Impedance RL － 50 Ω

    Typical Response Curves

    (VR ,  λ=1550nm , TC =25 ºC ,Pin=0dBm)

    1 1
    Fig . 1 C- Band Photodetector Frequency Response
    2 1
    Fig . 2 X- Band Photodetector Frequency Response
    3
    Fig . 3 Ku- Band Photodetector Frequency Response
    4
    Fig . 4 K+ – Band Photodetector Frequency Response

    Dimension and Pins ( Unit: mm[inch] ) 

    HSPD High Speed InGaAs Photodetector

    RF Connector： SMA  or  2.92mm

    Model Information

    HSPD High Speed InGaAs Photodetector

    Precautions

    1. The fiber bending radius is no less than 20 mm to avoid fiber damage.
    2. Be sure the fiber coupling facet is clean before connecting it to the Opto-circuit.
    3. Suitable ESD protection is required in storage, transportation, and use.

    We are happy to provide you with commercial services. If you have any questions or needs about high-speed photodetectors, please feel free to contact us.